| 摘要 |
An embodiment of the present invention relates to a light emitting device, a method for manufacturing the light emitting device, a light emitting device package, and a lighting system. According to an embodiment of the present invention, the light emitting device of the present invention can comprise: a first conductive semiconductor layer (112); an active layer (114) which comprises a quantum well and a quantum wall and is placed on the first conductive semiconductor layer (112); and, a second conductive semiconductor layer (116) on the active layer (114). The active layer (114) can comprise: an InxGa1-xN well layer (114W) on the first conductive semiconductor layer (112) (0<x<1); and, an InyGa1-yN/GaN superlattice well layer (114WS) on the InxGa1-xN well layer (114W) (0<y<=1). |
