发明名称 QUALITY EVALUATION METHOD OF OXIDE SEMICONDUCTOR THIN FILM AND LAMINATE HAVING PROTECTION FILM ON SURFACE OF OXIDE SEMICONDUCTOR THIN FILM, AND QUALITY CONTROL METHOD OF OXIDE SEMICONDUCTOR THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a method of correctly and simply evaluating quality of an oxide semiconductor thin film and a laminate having a protection film on a surface of the oxide semiconductor thin film, and a quality control method of the oxide semiconductor film.SOLUTION: A quality evaluation method of an oxide semiconductor thin film and a laminate having a protection film on a surface of the oxide semiconductor thin film comprises: a first step of evaluating fault caused by defects in the oxide semiconductor thin film by measuring an electronic state of the oxide semiconductor thin film by a contact method or a non-contact method after the oxide semiconductor thin film is formed on a substrate; and a second step of evaluating fault caused by defects in an interface of the oxide semiconductor thin film and the protection film by measuring an electronic state of the oxide semiconductor thin film by a contact method or a non-contact method after the protection film is formed on the surface of the oxide semiconductor thin film processed under a condition determined based on the evaluation by the first step.SELECTED DRAWING: Figure 17A
申请公布号 JP2016029709(A) 申请公布日期 2016.03.03
申请号 JP20150116960 申请日期 2015.06.09
申请人 KOBE STEEL LTD 发明人 KAWAKAMI NOBUYUKI;HAYASHI KAZUSHI;KUGIMIYA TOSHIHIRO;OCHI MOTOTAKA
分类号 H01L21/66;G01N22/00 主分类号 H01L21/66
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