发明名称 |
FRONT SIDE PACKAGE-LEVEL SERIALIZATION FOR PACKAGES COMPRISING UNIQUE IDENTIFIERS |
摘要 |
A method of making a semiconductor device can include providing a plurality of semiconductor die, wherein each semiconductor die comprises an active surface and a backside opposite the active surface. The method can include forming a build-up interconnect structure that extends over the active surface of each of the plurality of semiconductor die within the wafer, and forming a unique identifying mark for each of the plurality of semiconductor die as part of a layer within the build-up interconnect structure while simultaneously forming the layer of the build-up interconnect structure. The layer of the build-up interconnect structure can comprise both the unique identifying marks for each of the plurality of semiconductor die and functionality for the semiconductor device. Each unique identifying mark can convey a unique identity of its respective semiconductor die. The method can further include singulating the plurality of semiconductor die into a plurality of semiconductor devices. |
申请公布号 |
US2016064334(A1) |
申请公布日期 |
2016.03.03 |
申请号 |
US201514836525 |
申请日期 |
2015.08.26 |
申请人 |
DECA Technologies Inc. |
发明人 |
Bishop Craig;Daniel Sabbas A.;Scanlan Christopher M. |
分类号 |
H01L23/544;H01L21/66;H01L21/56;H01L21/768;H01L21/78 |
主分类号 |
H01L23/544 |
代理机构 |
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代理人 |
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主权项 |
1. A method of making a semiconductor device, comprising:
providing a plurality of semiconductor die, wherein each semiconductor die comprises an active surface and a backside opposite the active surface; forming a build-up interconnect structure that extends over the active surface of each of the plurality of semiconductor die within the wafer; forming a unique identifying mark for each of the plurality of semiconductor die as part of a layer within the build-up interconnect structure while simultaneously forming the layer of the build-up interconnect structure, wherein the layer of the build-up interconnect structure comprises both the unique identifying marks for each of the plurality of semiconductor die and functionality for the semiconductor device, wherein each unique identifying mark conveys a unique identity of its respective semiconductor die; and singulating the plurality of semiconductor die into a plurality of semiconductor devices. |
地址 |
Tempe AZ US |