| 发明名称 |
DYNAMIC RANDOM ACCESS MEMORY CELL INCLUDING A FERROELECTRIC CAPACITOR |
| 摘要 |
A memory cell includes a capacitor that includes a first metal layer and a second metal layer. The capacitor includes a ferroelectric layer disposed between the first metal layer and the second metal layer. The ferroelectric layer is a single layer of a bi-stable asymmetric crystalline material. |
| 申请公布号 |
WO2016032644(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
WO2015US41798 |
申请日期 |
2015.07.23 |
| 申请人 |
QUALCOMM INCORPORATED |
发明人 |
LI, XIA;KANG, WOO TAG;YUN, CHANGHAN HOBIE;CHEN, WEI-CHUAN |
| 分类号 |
G11C11/22;H01L49/02 |
主分类号 |
G11C11/22 |
| 代理机构 |
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