SEMICONDUCTOR STRUCTURE

摘要

A semiconductor structure is provided. The semiconductor structure comprises a doped substrate, a gate structure, a source, a drain and a field doped region. The source and the drain are in the doped substrate on opposing sides of the gate structure respectively. The field doped region has a conductivity type opposite to a conductivity type of the source and the drain. The field doped region is extended from the source to be beyond a first gate sidewall of the gate structure but not reach a second gate sidewall of the gate structure opposing to the first gate sidewall.

主权项

1. A semiconductor structure, comprising:
a doped substrate; a gate structure; a source and a drain in the doped substrate on opposing sides of the gate structure respectively; and a field doped region having a conductivity type opposite to a conductivity type of the source and the drain, extending from the source to be beyond a first gate sidewall of the gate structure but not reaching a second gate sidewall of the gate structure opposing to the first gate sidewall; wherein each of the source and the drain comprises a first doped portion and a second doped portion adjacent to the first doped portion and having a dopant concentration higher than a dopant concentration of the first doped portion having the same type conductivity with the second doped portion, the first doped portion of the drain is extended beyond opposing sidewalls of the second doped portion of the drain.