| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which conduction loss of a diode element is reduced and lowering of withstand voltage is also suppressed.SOLUTION: Trenches 13 are formed in an IGBT region 1a and a diode region 1b, respectively. In addition, at least part of gate electrodes 17b disposed in the diode region 1b can be controlled in a different way from that of the gate electrodes 17a disposed in the IGBT region 1a, and a voltage with which an inversion layer 24 connecting between a first electrode 19 and a drift layer 11 is not formed is applied to the at least part of gate electrodes 17b disposed in the diode region 1b.SELECTED DRAWING: Figure 2 |
