Method for Producing a Conductor Line

摘要

A method for producing a rounded conductor line of a semiconductor component is disclosed. In that method, a partially completed semiconductor component is provided. The partially completed semiconductor component has a bottom side and a top side spaced distant from the bottom side in a vertical direction. Also provided is an etchant. On the top side, a dielectric layer is arranged. The dielectric layer has at least two different regions that show different etch rates when they are etched with the etchant. Subsequently, a trench is formed in the dielectric layer such that the trench intersects each of the different regions. Then, the trench is widened by etching the trench with the etchant at different etch rates. By filling the widened trench with an electrically conductive material, a conductor line is formed.

主权项

1. A method for producing a conductor line of a semiconductor component, the method comprising:
providing a partially completed semiconductor component with a bottom side and a top side spaced distant from the bottom side in a vertical direction; providing an etchant; arranging a dielectric layer that is doped with a dopant on the top side by subsequently depositing a number of at least two sub-layers, wherein in any two adjacent ones of the at least two sub-layers a concentration of the dopant is
(a) different; or(b) zero in one of the two adjacent ones of the at least two sub-layers and greater than zero in the other one of the two adjacent ones of the at least two sub-layers; forming a trench in the dielectric layer such that the trench intersects each of the at least two sub-layers; widening the trench by etching the trench with the etchant at different etch rates caused by different concentrations of the dopant; and forming a conductor line by filling the widened trench with an electrically conductive material.