SEMICONDUCTOR STRUCTURE AND RECESS FORMATION ETCH TECHNIQUE

摘要

A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

主权项

1. A transistor, comprising:
a channel layer; and a barrier layer comprising a first layer including first semiconductor material and a second layer including a second semiconductor material, wherein the first layer is disposed over the second layer, wherein the first semiconductor material is selectively etchable over the second semiconductor material using a dry etching process, and wherein a gate recess is disposed at least in the first layer; and a gate disposed in the gate recess.