NON-PLANAR ESD DEVICE FOR NON-PLANAR OUTPUT TRANSISTOR AND COMMON FABRICATION THEREOF

摘要

Protecting non-planar output transistors from electrostatic discharge (ESD) events includes providing a non-planar semiconductor structure, the structure including a semiconductor substrate with a well of n-type or p-type. The provided non-planar structure further includes raised semiconductor structure(s) coupled to the substrate, non-planar transistor(s) of a type opposite the well, each transistor being situated on one of the raised structure(s), the non-planar transistor(s) each including a source, a drain and a gate, the non-planar structure further including parasitic bipolar junction transistor(s) (BJT(s)) on the raised structure(s), each BJT including a collector and an emitter situated on the raised structure and a base being the well, and a well contact for the base of the BJT. Protecting the non-planar output transistors further includes electrically coupling the drain of the non-planar transistor and the collector of the BJT to an output of a circuit, and electrically coupling the source of the non-planar transistor, the emitter of the BJT and the well contact to a ground of the circuit.

主权项

1. A method, comprising:
providing a non-planar semiconductor structure, the structure comprising:
a semiconductor substrate, comprising a well of a first type, the first type comprising one of n-type and p-type;at least one raised semiconductor structure coupled to the substrate;a non-planar transistor of a second type opposite the first type, the transistor being situated on the at least one raised structure, the non-planar transistor comprising a source, a drain and a gate; anda parasitic bipolar junction transistor (BJT) separate from the non-planar transistor on the at least one raised structure, the BJT comprising a collector and an emitter on the at least one raised structure and a base comprising the well; electrically coupling the drain of the non-planar transistor and the collector of the BJT to an output of a circuit; and electrically coupling the source of the non-planar transistor and the emitter of the BJT to a ground of the circuit.