发明名称 |
MATERIALS AND COMPONENTS IN PHASE CHANGE MEMORY DEVICES |
摘要 |
Phase change memory cells, structures, and devices having a phase change material and an electrode forming an ohmic contact therewith which includes carbon and tungsten doped with nitrogen are disclosed and described. Such electrodes have a low contact resistance with the phase change material and a high thermal stability from room temperature to temperatures needed for programming operations. |
申请公布号 |
WO2016032605(A1) |
申请公布日期 |
2016.03.03 |
申请号 |
WO2015US37407 |
申请日期 |
2015.06.24 |
申请人 |
INTEL CORPORATION |
发明人 |
FUMAGALLI, LUCA;LAZZARI, CARLA M.;SONCINI, VALTER |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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