SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

摘要

The performances of a semiconductor device are improved. A semiconductor device has a conductive film formed above a semiconductor substrate, a first ferromagnetic film formed over the conductive film, an insulation film formed over the first ferromagnetic film, and a second ferromagnetic film formed over the insulation film. The first ferromagnetic film, the insulation film, and the second ferromagnetic film form a tunnel magnetoresistive effect element. The conductive film is formed of a metal nitride. The first ferromagnetic film contains cobalt, iron, and boron. The insulation film contains magnesium oxide.

主权项

1. A semiconductor device, comprising:
a first conductive film formed above a semiconductor substrate; a first ferromagnetic film formed over the first conductive film; an insulation film formed over the first ferromagnetic film; and a second ferromagnetic film formed over the insulation film, wherein the first ferromagnetic film, the insulation film, and the second ferromagnetic film form a tunnel magnetoresistive effect element, wherein the first conductive film is formed of a metal nitride, wherein the first ferromagnetic film contains cobalt, iron, and boron, and wherein the insulation film contains magnesium oxide.