SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

摘要

To provide a semiconductor device having a memory cell equipped with a control gate electrode and a memory gate electrode adjacent to each other via a charge storage layer and having improved performance.;In a semiconductor device having a MISFET including a gate electrode which is a metal gate electrode formed by a so-called gate last process, a control gate electrode and a memory gate electrode which include a memory cell of a split-gate type MONOS memory are formed by fully siliciding a silicon film.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; and a memory cell having a first gate electrode including a first silicide layer formed over the semiconductor substrate via a first insulating film, a second gate electrode including a second silicide layer formed over a side wall of the first gate electrode via a second insulating film having therein a charge storage portion, and first source and drain regions formed in a main surface of the semiconductor substrate; wherein the second gate electrode is formed over the semiconductor substrate via the second insulating film; wherein the first silicide layer is contiguous to an upper surface of the first insulating film; and wherein the second silicide layer is contiguous to an upper surface of the second insulating film between the second gate electrode and the semiconductor substrate.