SEMICONDUCTOR DEVICES HAVING GATE STACK PORTIONS THAT EXTEND IN A ZIGZAG PATTERN

摘要

A semiconductor device includes a substrate having an upper surface extended in first and second directions perpendicular to each other, gate stack portions spaced apart from each other in the first direction, the gate stack portions including gate electrodes spaced apart from each other in a direction perpendicular to the an upper surface of the substrate and having lateral surfaces extended in the second direction to have a zigzag form, channel regions penetrating through the gate stack portions and disposed to form columns having a zigzag form in the second direction, at least two channel regions among the channel regions being linearly arranged in the first direction within the respective gate stack portion, and a source region disposed between the gate stack portions adjacent to each other and extended in the second direction to have a zigzag form.

主权项

1. A semiconductor device comprising:
a substrate having an upper surface that extends in first and second directions that are perpendicular to each other; first and second gate stack portions that are spaced apart from each other in the first direction, the first and second gate stack portions including gate electrodes that are spaced apart from each other in a third direction that is perpendicular to the upper surface of the substrate, the first and second gate stack portions having lateral surfaces that extend in the second direction in a zigzag pattern; channel regions that penetrate the first and second gate stack portions, the channel regions arranged in columns that extend in the second direction in the zigzag pattern, wherein the first gate stack portion and the second gate stack portion each includes at least two channel regions that are linearly arranged in the first direction; and a source region disposed between the first and second gate stack portions, the source region extending in the second direction in a zigzag pattern.