| 发明名称 |
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE WITH PROTECTION LAYER |
| 摘要 |
A fin field effect transistor (FinFET) device structure and method for forming the same are provided. The FinFET device structure includes a first fin structure extending above a substrate and an isolation structure formed on the substrate. The first fin structure is embedded in the isolation structure, and the first fin structure has an upper portion and a lower portion. The upper portion is above the isolation structure, and the lower portion is below the isolation structure. The FinFET device structure also includes a protection layer formed on the sidewalls of the lower portion of the first fin structure. |
| 申请公布号 |
US2016064377(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201414472566 |
申请日期 |
2014.08.29 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd |
发明人 |
WANG Shiang-Bau |
| 分类号 |
H01L27/088;H01L29/78;H01L21/311;H01L21/324;H01L21/3105;H01L29/06;H01L21/8234 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A fin field effect transistor (FinFET) device structure, comprising:
a first fin structure extending above a substrate; an isolation structure formed on the substrate, wherein the first fin structure is embedded in the isolation structure, the first fin structure has an upper portion and a lower portion, the upper portion is above the isolation structure, and the lower portion is below the isolation structure; and a protection layer formed on the sidewalls of the lower portion of the first fin structure, wherein the protection layer has a thickness selectable from any of the thicknesses included in a range from 0.5 nm to about 10 nm. |
| 地址 |
Hsin-Chu TW |
