| 摘要 |
A flip chip light emitting diode (LED) package (200) includes an LED die (220) having a first substrate (221), a p-type region (222) and an n-type region (224) including an active layer (223) in between, a metal contact on the p-type region (anode contact) (226), and a metal contact on the n-type region (cathode contact) (227). A package substrate (240) or lead frame includes a dielectric material (240a) that has a first metal through via (first metal post) (240b) and second metal through via (second metal post) (240c) spaced apart from one another and embedded in the dielectric material. A first metal pad (241) is on a bottom side of the first metal post, and a second metal pad (242) is on a bottom side of the second metal post. An interconnect metal paste or metal ink residual (metal residual) is between the anode contact and first metal post and between the cathode contact and the second metal post. |
