LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A light-emitting device including a substrate; a first conductivity semiconductor layer disposed on the substrate; a first barrier disposed on the first conductivity semiconductor layer; a well disposed on the first barrier and including a first region having a first energy gap and a second region having a second energy gap and closer to the semiconductor layer than the first region; a second barrier disposed on the well; and a second conductivity semiconductor layer disposed on the second barrier; wherein the first energy gap decreases along a stacking direction of the light-emitting device and has a first gradient, the second energy gap increases along the stacking direction and has a second gradient, and an absolute value of the first gradient is smaller than an absolute value of the second gradient.

主权项

1. A light-emitting device comprising:
a substrate; a first conductivity semiconductor layer disposed on the substrate; a first barrier disposed on the first conductivity semiconductor layer; a well disposed on the first barrier and comprising:
a first region having a first energy gap; anda second region having a second energy gap and closer to the semiconductor layer than the first region; a second barrier disposed on the well; and a second conductivity semiconductor layer disposed on the second barrier; wherein the first energy gap is decreased along a stacking direction of the light-emitting device and has a first gradient, the second energy gap is increased along the stacking direction and has a second gradient, and an absolute value of the first gradient is smaller than an absolute value of the second gradient.