发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 According to one embodiment, a semiconductor memory device comprises a memory cell including a variable resistance element, a sense amplifier connected to one side of the memory cell, and a write driver connected to the other side of the memory cell. A write current flows between the sense amplifier and the write driver in a write operation.
申请公布号 US2016064059(A1) 申请公布日期 2016.03.03
申请号 US201514627592 申请日期 2015.02.20
申请人 TAKAHASHI Masahiro 发明人 TAKAHASHI Masahiro
分类号 G11C11/16 主分类号 G11C11/16
代理机构 代理人
主权项 1. A semiconductor memory device comprising: a memory cell including a variable resistance element; a sense amplifier connected to one side of the memory cell; and a write driver connected to the other side of the memory cell; wherein a write current flows between the sense amplifier and the write driver in a write operation.
地址 Seongnam-si KR