INTEGRATED CIRCUITS INCLUDING A MIMCAP DEVICE AND METHODS OF FORMING THE SAME FOR LONG AND CONTROLLABLE RELIABILITY LIFETIME

摘要

Integrated circuits including a MIMCAP device and methods of forming the integrated circuits are provided. An exemplary method of forming an integrated circuit including a MIMCAP device includes pre-determining a thickness of at least one of a bottom high-K layer or a top high-K layer of the MIMCAP device, followed by fabricating the MIMCAP device. The pre-determined thickness is established based upon a pre-determined TDDB lifetime for the MIMCAP device and a minimum target capacitance density at an applied voltage bias to be employed for the MIMCAP device. The MIMCAP device includes a bottom electrode and a dielectric layer disposed over the bottom electrode. The dielectric layer includes a stack of individual layers including the bottom high-K layer, the top high-K layer, and a lower-K layer sandwiched therebetween. At least one of the bottom high-K layer or the top high-K layer has the pre-determined thickness.

主权项

1. A method of forming an integrated circuit including a metal-insulator-metal capacitor (MIMCAP) device, wherein the method comprises:
pre-determining a thickness of at least one of a bottom high-K layer or a top high-K layer of the MIMCAP device, wherein the pre-determined thickness is established based upon a pre-determined time-dependent dielectric breakdown (TDDB) lifetime for the MIMCAP device and a minimum target capacitance density at an applied voltage bias to be employed for the MIMCAP device; and fabricating the MIMCAP device after pre-determining the thickness of at least one of the bottom high-K layer or the top high-K layer, wherein the MIMCAP device comprises:
a bottom electrode, a dielectric layer disposed over the bottom electrode and including a stack of individual layers including the bottom high-K layer, the top high-K layer, and a lower-K layer sandwiched between the bottom high-K layer and the top high-K layer, and a top electrode disposed over the dielectric layer, wherein at least one of the bottom high-K layer or the top high-K layer has the pre-determined thickness.