| 发明名称 |
LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
A light emitting diode includes a first electrode, a second electrode and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure to emit out from the top of the epitaxial structure. This disclosure also relates to a method for manufacturing the light emitting diode. The light emitting diode and the method help solve the problem of low light efficiency of the light emitting diode. |
| 申请公布号 |
US2016064613(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201514823129 |
申请日期 |
2015.08.11 |
| 申请人 |
ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. |
发明人 |
CHIU CHING-HSUEH;HUANG CHIA-HUNG;LIN YA-WEN;TU PO-MIN;HUANG SHIH-CHENG |
| 分类号 |
H01L33/40;H01L33/06;H01L33/54;H01L33/08;H01L33/38;H01L33/00;H01L33/12 |
主分类号 |
H01L33/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light emitting diode, comprising:
a first electrode, a second electrode, and an epitaxial structure arranged on the first electrode and electrically connected to the first electrode and the second electrode; wherein the second electrode surrounds periphery of the epitaxial structure to reflect light emitted from the epitaxial structure to emit out from top of the epitaxial structure. |
| 地址 |
Hsinchu Hsien TW |
