发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes a mesh-patterned power source wiring that supplies respective circuits with a power source voltage supplied to a plurality of locations at an outer periphery of the semiconductor device. The semiconductor device also includes a back-biasing wiring supplying, to a semiconductor substrate, a substrate voltage that controls a threshold voltage of a semiconductor element. The back-biasing wiring includes a upper layer mesh wiring that receives a supply of a substrate voltage, and a lower layer mesh wiring that is provided in a different wiring layer from the upper layer mesh wiring. The outer peripheries of the upper layer mesh wiring and the lower layer mesh wiring are connected to each other through plural vias.
申请公布号 US2016064369(A1) 申请公布日期 2016.03.03
申请号 US201514821187 申请日期 2015.08.07
申请人 SOCIONEXT INC. 发明人 KONDO Eiji
分类号 H01L27/02;H01L27/092;H01L29/78;H01L23/522 主分类号 H01L27/02
代理机构 代理人
主权项 1. A semiconductor device, comprising: a plurality of circuits that are provided on a semiconductor substrate, and that each include a semiconductor element having a threshold voltage, the threshold voltage controlled by a substrate voltage supplied to the semiconductor substrate; a mesh-patterned first wiring that supplies each of the plurality of circuits with a power source voltage supplied to a plurality of locations at an outer periphery of the first wiring; a mesh-patterned second wiring that is provided at a wiring layer, and that receives a supply of the substrate voltage; and a mesh-patterned third wiring that is provided at a different wiring layer from the wiring layer at which the second wiring is provided, that has an outer periphery connected to an outer periphery of the second wiring, and that supplies the substrate voltage to the semiconductor substrate.
地址 Yokohama-shi JP