METAL-INSENSITIVE EPITAXY FORMATION

摘要

The present invention provides a method for forming a field effect transistor (FET) in accordance with some embodiments. The method comprises: performing an etching process to a semiconductor substrate to form recesses in source and drain (S/D) regions of the semiconductor substrate; forming a passivation material layer of a first semiconductor in the recesses; and epitaxially growing a second semiconductor material to form S/D features in the recesses, wherein the S/D features are separated from the semiconductor substrate by the passivation material layer.