| 摘要 |
A CVD-SiC formed body has low light transmittance and high resistivity, and may suitably be used as a member for an etcher that is used for a semiconductor production process, for example. The SiC formed body is formed using a CVD method, and includes 1 to 30 mass ppm of boron atoms, and more than 100 mass ppm and 1000 mass ppm or less of nitrogen atoms. The SiC formed body preferably has a resistivity of more than 10 ©·cm and 100,000 ©·cm or less, and a light transmittance at a wavelength of 950 nm of 0 to 1%. |
