| 摘要 |
PROBLEM TO BE SOLVED: To form a semiconductor nanowire by a simpler step, more inexpensively.SOLUTION: In a step S101, a carbon compound gas is supplied onto a heated substrate 101 made of iron to form a carbon layer 102 on the substrate 101 (a carbon layer formation step). For example, the substrate 101 is heated to approximately 600°C, and in this state, the carbon compound gas such as methane, acethylene, or methanol is supplied onto a surface of the substrate 101 to form the carbon layer 102. Next, in a step S102, a semiconductor nanowire 103 is formed on the carbon layer 102 by an organic metal vapor growth method (a nanowire formation step). For example, the nanowire 103 is formed by the organic metal vapor growth method using a metal fine particle (not shown) of such as Au, Al, In, as a catalyst. |
