| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon etchant capable of removing silicon and the like with accuracy at high speed with respect to polycrystalline silicon and/or amorphous silicon while maintaining residual electrode members and the like without damage, and an etching method using the same and a semiconductor substrate product using the same. <P>SOLUTION: In an etching method, a silicon etchant containing in an aqueous medium a compound with the carbon number of 3 or more that has an anionic group, nitric acid, and hydrogen fluoride acid, is prepared. The silicon etchant is applied to a silicon film made of polycrystalline silicon and/or amorphous silicon to form an unevenness shape to be a capacitor. <P>COPYRIGHT: (C)2013,JPO&INPIT |
