发明名称 MEMSスイッチおよびその製造方法
摘要 <P>PROBLEM TO BE SOLVED: To solve a problem on a new structure of a microswitch using a flexible beam. <P>SOLUTION: A MEMS switch comprises: a flexible beam FB formed of an active Si layer AL of a SOI substrate and supported by a supporting Si substrate SS through a bonding oxide film BOX; a movable drive electrode MDE formed on the flexible beam FB; a movable contact electrode MCE having a movable contact point formed on the flexible beam FB; a fixed drive electrode FDE supported at a first set of fixing parts and extended above the movable drive electrode MDE; and a fixed contact electrode FCE supported by a second set of fixing parts and having a fixed contact point above the movable contact point. The fixed drive electrode FDE and the fixed contact electrode FCE include laminated layer of an adhesion metal layer AM, a seed layer SD and a plated layer PL, above the first and the second set of fixing parts. The plated layer PL is on the seed layer SD in a free lower surface faced to the movable drive electrode MDE and the movable contact point. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP5870616(B2) 申请公布日期 2016.03.01
申请号 JP20110229587 申请日期 2011.10.19
申请人 富士通株式会社 发明人 奥田 久雄;中谷 忠司;勝木 隆史;島内 岳明;豊田 治
分类号 H01H59/00;H01H49/00 主分类号 H01H59/00
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