| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a plurality of color signals from signal charge of respective layers in each pixel portion, collectively and simultaneously detected in one pixel portion, by a multilayered light-receiving portion having a plurality of layers, and realize sharp full-color imaging of both a still image and a moving image. <P>SOLUTION: A solid state imaging element includes: P-type implantation regions 4 and N-type implantation regions 5 arranged alternately and adjacently in one direction on a semiconductor layer or a semiconductor substrate, in which a plurality of layers of photoelectric conversion portions (three layers of P-type implantation regions and N-type implantation regions) for performing photoelectric conversion of image light from a subject are laminated so that transparent layers (SiO<SB POS="POST">2</SB>films) having band gaps different from those of the photoelectric conversion portions are interposed therebetween, and the three layers of P-type implantation regions 4 and N-type implantation regions 5 are arranged in the other direction perpendicular to the one direction; a plurality of charge transfer driving transparent electrodes 6-11 provided in one direction on the P-type implantation regions 4 and N-type implantation regions 5; and incident light transmitting/blocking control means provided on the charge transfer driving transparent electrodes 6-11, for transmitting or blocking incident light. <P>COPYRIGHT: (C)2013,JPO&INPIT |
