| 发明名称 | Light-emitting diode chip and method for producing the same | ||
| 摘要 | A light-emitting diode chip is specified, comprising an n-conducting region (1),a p-conducting region (2),an active region (3) between the n-conducting region (1) and the p-conducting region (2),a mirror layer (4) at that side of the p-conducting region (2) which is remote from the active region (3), andan insulation layer (5) formed with an electrically insulating material, whereinthe mirror layer (4) is designed for reflecting electromagnetic radiation generated in the active region (3), andthe mirror layer (4) has a perforation (41), wherein a side area (4a) of the mirror layer (4) is completely covered by the insulation layer (5) in the region of the perforation (41). | ||
| 申请公布号 | US9276167(B2) | 申请公布日期 | 2016.03.01 |
| 申请号 | US201113820999 | 申请日期 | 2011.08.11 |
| 申请人 | OSRAM Opto Semiconductors GmbH | 发明人 | Höppel Lutz |
| 分类号 | H01L33/02;H01L33/20;H01L33/38;H01L33/40;H01L33/44;H01L33/00;H01L33/22 | 主分类号 | H01L33/02 |
| 代理机构 | McDermott Will & Emery LLP | 代理人 | McDermott Will & Emery LLP |
| 主权项 | 1. A light-emitting diode chip comprising: an n-conducting region; a p-conducting region; an active region between the n-conducting region and the p-conducting region; a mirror layer at that side of the p-conducting region which is remote from the active region; and an insulation layer formed with an electrically insulating material, wherein the mirror layer is designed for reflecting electromagnetic radiation generated in the active region, wherein the mirror layer has a perforation, wherein a side area of the mirror layer is completely covered by the insulation layer in the region of the perforation, wherein the remaining outer area of the mirror layer is free of the insulation layer, and wherein the insulation layer does not project beyond the mirror layer in a vertical direction. | ||
| 地址 | Regensburg DE | ||