发明名称 Memory system, program method thereof, and computing system including the same
摘要 Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.
申请公布号 US9275742(B2) 申请公布日期 2016.03.01
申请号 US201414491156 申请日期 2014.09.19
申请人 Samsung Electronics Co., Ltd. 发明人 Jang Jun-Ho;Choi In-Hwan;Chung Woon-Jae;Yoon Song-Ho;Ye Kyung-Wook
分类号 G11C11/34;G11C16/10;G11C11/56;G06F12/02 主分类号 G11C11/34
代理机构 Onello & Mello, LLP 代理人 Onello & Mello, LLP
主权项 1. A method of programming a multi-bit flash memory device which includes memory cells, each memory cell configured to store one or more data including at least either a lower page and or an upper page, the method comprising: storing an LSB data of the lower page in a selected memory cell; if data to be stored is assigned to the upper page in the selected memory cell, backing up the lower page data stored already in the selected memory cell to a backup memory block in the multi-bit flash memory device; and copying the lower page data backed up in the backup memory block to a free memory block in the multi-bit flash memory device after a power failure to a memory block including the selected memory cell is detected, wherein the free block is different from the memory block including the selected memory cell.
地址 KR
您可能感兴趣的专利