发明名称 |
Memory system, program method thereof, and computing system including the same |
摘要 |
Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device. |
申请公布号 |
US9275742(B2) |
申请公布日期 |
2016.03.01 |
申请号 |
US201414491156 |
申请日期 |
2014.09.19 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Jang Jun-Ho;Choi In-Hwan;Chung Woon-Jae;Yoon Song-Ho;Ye Kyung-Wook |
分类号 |
G11C11/34;G11C16/10;G11C11/56;G06F12/02 |
主分类号 |
G11C11/34 |
代理机构 |
Onello & Mello, LLP |
代理人 |
Onello & Mello, LLP |
主权项 |
1. A method of programming a multi-bit flash memory device which includes memory cells, each memory cell configured to store one or more data including at least either a lower page and or an upper page, the method comprising:
storing an LSB data of the lower page in a selected memory cell; if data to be stored is assigned to the upper page in the selected memory cell, backing up the lower page data stored already in the selected memory cell to a backup memory block in the multi-bit flash memory device; and copying the lower page data backed up in the backup memory block to a free memory block in the multi-bit flash memory device after a power failure to a memory block including the selected memory cell is detected, wherein the free block is different from the memory block including the selected memory cell. |
地址 |
KR |