发明名称 Driver and display device including the same
摘要 The present invention relates to a driver and a display device including the same, wherein the driver includes: a first driving circuit generating a first output signal; a second driving circuit generating a second output signal; and at least one buffer circuit generating a third output signal of a voltage level corresponding to a gate-on voltage level of the first output signal or the second output signal when the first output signal or the second output signal is transmitted as a gate-on voltage level, and the buffer circuit includes a first transistor transmitting the voltage of the first level as the third output signal, and a second transistor transmitting the voltage of a second level turning off the first transistor and connected to the gate electrode of the first transistor.
申请公布号 US9275580(B2) 申请公布日期 2016.03.01
申请号 US201113038557 申请日期 2011.03.02
申请人 Samsung Display Co., Ltd. 发明人 Chung Bo-Yong
分类号 G09G3/32;G09G3/36;G11C19/18 主分类号 G09G3/32
代理机构 代理人 Bushnell, Esq. Robert E.
主权项 1. A driver comprising: a first driving circuit receiving a first input signal and three phase clock signals and generating a first output signal controlled according to a first clock signal among the three phase clock signals; a second driving circuit receiving a second input signal and the three phase clock signals and generating a second output signal controlled according to a second clock signal among the three phase clock signals; and at least one buffer circuit generating a third output signal of a voltage level corresponding to a gate-on voltage level of the first output signal or the second output signal when the first output signal or the second output signal is transmitted as the gate-on voltage level, wherein the buffer circuit includes: a first transistor transmitting a voltage of a first level as the third output signal, anda second transistor transmitting a voltage of a second level turning off the first transistor and connected to a gate electrode of the first transistor; anda third transistor connected to the gate electrode of the first transistor and transmitting a voltage of a third level less than the voltage of the first level turning on the first transistor.
地址 Samsung-ro, Giheung-Gu, Yongin-si, Gyeonggi-Do KR
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