| 发明名称 | Nanostructures and methods of making the same | ||
| 摘要 | A nanostructure includes a highly conductive microcrystalline layer, a bipolar nanowire, and another layer (18, 30). The highly conductive microcrystalline layer includes a microcrystalline material and a metal. The bipolar nanowire has one end attached to the highly conductive microcrystalline layer and another end attached to the other layer. | ||
| 申请公布号 | US9272900(B2) | 申请公布日期 | 2016.03.01 |
| 申请号 | US200812864205 | 申请日期 | 2008.01.30 |
| 申请人 | Hewlett Packard Enterprise Development LP | 发明人 | Wang Shih-Yuan;Tan Michael Renne Ty |
| 分类号 | H01L29/06;B81C1/00;B82Y10/00;H01L31/0352;H01L31/105 | 主分类号 | H01L29/06 |
| 代理机构 | Dierker & Associates, P.C. | 代理人 | Dierker & Associates, P.C. |
| 主权项 | 1. A nanostructure, comprising: a highly conductive microcrystalline layer including, within the layer, a microcrystalline material and a metal selected from platinum, tungsten, titanium, nickel, and cobalt, the highly conductive microcrystalline layer having a resistivity ranging from about 1 μohm/cm to about 100 μohms/cm; a bipolar nanowire having one end attached to the highly conductive microcrystalline layer; and an other layer attached to an other end of the bipolar nanowire. | ||
| 地址 | Houston TX US | ||