Formation of electrical components on a semiconductor substrate by polishing to isolate the components

摘要

Trenches may be formed in layers on a semiconductor substrate for defining electrical components for an electronic device, such as an amplifier. A polishing step may be performed after formation of the trenches and deposition of other layer(s) to define regions for resistors, capacitors, or other elements in a metal layer on a semiconductor substrate. The polishing step may create discontinuities in metal layers on the semiconductor substrate that define electrically isolated regions corresponding to the resistors, capacitor, and other components of the electronic device.

主权项

1. A method for manufacturing an apparatus comprising a resistor and a capacitor on a semiconductor substrate, the method comprising:
depositing a first metal layer; depositing a first dielectric layer on the first metal layer; patterning the dielectric layer to define trenches in the dielectric layer corresponding to the resistor and the capacitor, wherein the trenches expose at least a portion of the first metal layer; depositing a second dielectric layer on the first dielectric layer and the trenches; depositing a second metal layer on the second dielectric layer, wherein the second metal layer comprises a portion of the resistor and a portion of the capacitor; depositing a buffer layer on the second metal layer; and polishing the semiconductor substrate to isolate the resistor from the capacitor without exposing a horizontal plane of the second metal layer by stopping the polishing process before the buffer layer is completely removed; further comprising forming at least one first via extending through the buffer layer to the second metal layer in a first trench of the patterned trenches.