| 摘要 |
The present invention provides a transistor using an oxide semiconductor having excellent temperature characteristics. Moreover, provided is a high performance semiconductor device including the transistor, capable of high speed response and high speed operation. The transistor includes an oxide semiconductor film including a channel formation area and low resistance areas containing a metal element and a dopant. The channel formation area is placed between the low resistance areas in the channel length direction. In the transistor manufacturing process, the metal element is injected by thermal treatment, performed while the oxide semiconductor film touches a film containing the metal element, and the dopant is injected by an injecting method through the film containing the metal element, and therefore, the low resistance areas, containing the metal element and the dopant, are formed. |
