| 摘要 |
The present invention provides a method for growing an n-type nitride semiconductor layer, a light emitting diode (LED), and a method for manufacturing the same. The method for manufacturing the LED comprises: arranging a substrate in a growing chamber; forming the n-type nitride semiconductor layer on the substrate; and forming an active layer and a p-type nitride semiconductor layer. Forming the n-type nitride semiconductor layer comprises: forming a first middle layer on the substrate; forming an n-type modulation doping layer including a layer where an n-type dopant is modulation-doped on the first middle layer; and forming a second middle layer on the n-type modulation doping layer. The second middle layer includes a superlattice layer where a first sub-middle layer and a second sub-middle layer are repeatedly stacked, the second sub-middle layer having a band gap energy range that is less than the first sub-middle layer. The first sub-middle layer is doped in an n-type with a doping density of 1×1018atoms/cm3 or more. According to the present invention, the LED, which allows uniform current distribution and has superior crystallization ability of the semiconductor layer and superior radiation efficiency due to superior electron injection efficiency, can be manufactured. |
