发明名称 INDUCED THERMAL GRADIENTS
摘要 A temperature difference between a first thermal sensor and a second thermal sensor on a first die is determined. The temperature difference is transmitted from the first die to a circuit on a second die. A temperature from a thermal sensor on the second die is determined. The temperature difference and the temperature from the thermal sensor are utilized on the second die to modify operational characteristics of one or more circuits on the second die.
申请公布号 US2016055901(A1) 申请公布日期 2016.02.25
申请号 US201514838994 申请日期 2015.08.28
申请人 Intel Corporation 发明人 Shoemaker Kenneth D.
分类号 G11C11/406 主分类号 G11C11/406
代理机构 代理人
主权项 1. An apparatus comprising: a memory die including dynamic random access memory (DRAM), a mode register including a storage location for a thermal offset bit, and a memory thermal sensor; and a second die including logic circuitry thermally coupled with the memory die, the second die further including a first thermal sensor and a second thermal sensor, the first and second thermal sensors to detect a thermal gradient, and the logic circuitry to provide a thermal offset bit to the storage location for the thermal offset bit of the mode register on the memory die responsive to detection of a change in the thermal gradient, the memory thermal sensor of the memory die being aligned with or in close proximity with the first thermal sensor of the second die, and the second thermal sensor of the second die being located at a hot spot of the second die; wherein the memory die includes a temperature compensated self-refresh (TCSR) logic, the TCSR logic to modify a self-refresh rate of the DRAM responsive, at least in part, to the thermal offset bit.
地址 Santa Clara CA US