| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device enhancing reliability at the time of operation.SOLUTION: A semiconductor storage device comprises: word lines extending in a first direction (X direction) and being disposed in a second direction (Y direction) intersecting with the first direction and in a third direction (Z direction) intersecting with the first direction and the second direction; bit lines BL extending in the third direction and being disposed in the first direction and the second direction; variable resistance layers VR being provided among the word lines and the bit lines BL and functioning as storage elements MC; global bit lines commonly connected with a plurality of bit lines BL; selection elements STr provided among the bit lines BL and the global bit lines; a control circuit capable of executing each operation of reading out, writing and erasing with respect to the storage elements MC; and resistive elements Rs being provided closer to a global bit line side than the selection element STr and adjusting a magnitude of a voltage applied to the selection elements STr in response to a magnitude of a current flowing through each of the selection element STr.SELECTED DRAWING: Figure 5A |
