发明名称 WHITE LIGHT EMITTING DIODE WITH SINGLE CRYSTAL PHOSPHOR AND THE MANNER OF PRODUCTION
摘要 According to the invention, the diode with a single crystal phosphor placed over the chip comprises the fact that the single crystal phosphor, created by LnYAG and/or YAP and/or GGAG hosts, doped with the atoms selected from the Ce3+, Ti, Cr3+, Sm2+, B3+, Gd3+ or Ga3+ group, when the Lu3+, Y3+ and Al3+ atoms can be replaced in the host up to the amount of 99.9% with the B3+, Gd3+ or Ga3+ atoms. The composition and manner of production of the phosphor, treatment and shape of its surface and construction of the whole diode ensure the extraction of the converted light in the direction from the chip itself of the diode towards the object that is being illuminated and limit the total reflection effect on the interface of the single crystal phosphor and encapsulant or single crystal phosphor and surrounding environment.
申请公布号 US2016056347(A1) 申请公布日期 2016.02.25
申请号 US201414779666 申请日期 2014.04.22
申请人 CRYTUR SPOL. S.R.O. 发明人 KUBAT Jan;HOUZVICKA Jindrich;POLAK Jan
分类号 H01L33/50;H01L27/15;H01L33/32;H01L33/44;H01L33/00 主分类号 H01L33/50
代理机构 代理人
主权项 1. A white-light emitting diode with a single crystal phosphor placed over the chip selected from the InGaN, GaN or AlGaN group, wherein the single crystal phosphor is on the basis of hosts of LuYAG and/or YAP and/or GGAG doped with atoms selected from the Ce3+, Ti3+, Cr3+, Eu2+, Sm2+, B3+, C, Gd3+ or Ga3+ group.
地址 Turnov CZ