| 发明名称 |
Metal-Insensitive Epitaxy Formation |
| 摘要 |
The present disclosure provides a method forming a field effect transistor (FET) in accordance with some embodiments. The method includes performing an etching process to a semiconductor substrate, thereby forming recesses in source and drain (S/D) regions of the semiconductor substrate; forming a passivation material layer of a first semiconductor in the recesses; and epitaxially growing a second semiconductor material, thereby forming S/D features in the recesses, wherein the S/D features are separated from the semiconductor substrate by the passivation material layer. |
| 申请公布号 |
US2016056290(A1) |
申请公布日期 |
2016.02.25 |
| 申请号 |
US201514597115 |
申请日期 |
2015.01.14 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Tsai Chun Hsiung;Hwang Yuan-Ko |
| 分类号 |
H01L29/78;H01L29/165;H01L21/02;H01L29/16;H01L21/3065;H01L21/04 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a field effect transistor (FET), the method comprising:
performing an etching process to a semiconductor substrate, thereby forming recesses in source and drain (S/D) regions of the semiconductor substrate; forming a passivation material layer of a first semiconductor in the recesses; and epitaxially growing a second semiconductor material, thereby forming S/D features in the recesses, wherein the S/D features are separated from the semiconductor substrate by the passivation material layer. |
| 地址 |
Hsin-Chu TW |
