发明名称 |
ELECTROMECHANICAL DEVICES AND METHODS FOR FABRICATION OF THE SAME |
摘要 |
A fabricated electromechanical device is disclosed herein. An exemplary device includes, a substrate, at least one layer of a high-transconductance material separated from the substrate by a dielectric medium, a first electrode in electrical contact with the at least one layer of a high-transconductance material and separated from the substrate by at least one first supporting member, a second electrode in electrical contact with the layer of a high-transconductance material and separated from the substrate by at least one second supporting member, where the first electrode is electrically separate from the second electrode, and a third electrode separated from the at least one layer of high-transconductance material by a dielectric medium and separated from each of the first electrode and the second electrode by a dielectric medium. |
申请公布号 |
US2016052783(A1) |
申请公布日期 |
2016.02.25 |
申请号 |
US201514809934 |
申请日期 |
2015.07.27 |
申请人 |
The Trustees of Columbia University in The City of New York |
发明人 |
Rosenblatt Sami;Hone James;Chen Changyao |
分类号 |
B81C1/00 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method for fabricating an electromechanical device comprising:
depositing a first layer of etchable material on a substrate; depositing at least one layer of graphene on the etchable material; depositing a first electrode on the etchable material such that at least a first portion of the at least one layer of graphene is covered by the first electrode and at least a portion of the first electrode is directly in contact with the etchable material; depositing a second electrode on the etchable material such that at least a second portion of the at least one layer of graphene is covered by the second electrode and at least a portion of the second electrode is directly in contact with the etchable material; and exposing the etchable material to an etchant to remove the etchable material around the first and second electrodes and underneath the at least one layer of graphene, thereby fabricating a device having the at least one layer of graphene suspended above the substrate. |
地址 |
New York NY US |