| 摘要 |
A semiconductor switching string comprises a plurality of series-connected semiconductor switching elements (12A, 12B, 12C, 12D, 12E, 12F, 12G, 12H, 12N-1, 12N). Each semiconductor switching element (12A, 12B, 12C, 12D, 12E, 12F, 12G, 12H, 12N-1, 12N) includes first and second terminals (22, 24) between which current flows from the first terminal (22) to the second terminal (24) when the semiconductor switching element (12A, 12B, 12C, 12D, 12E, 12F, 12G, 12H, 12N-1, 12N) is switched on. Each semiconductor switching element (12A, 12B, 12C, 12D, 12E, 12F, 12G, 12H, 12N-1, 12N) also includes a third terminal (20) to control the said current flowing from the first terminal (22) to the second terminal (24), and a local switching controller (26A, 26B, 26N) that is operatively connected with the third terminal (20) to control a terminal voltage between the first and second terminals (22, 24). Each local switching controller (26A, 26B, 26N) of each semiconductor switching element (12A, 12B, 12C, 12D, 12E, 12F, 12G, 12H, 12N-1, 12N) is arranged in direct communication with at least one other semiconductor switching element (12A, 12B, 12C, 12D, 12E, 12F, 12G, 12H, 12N-1, 12N) to receive a feedback signal (34A, 34B, 34C, 34D, 34E, 34F, 34G, 34H, 34N-1, 34N), and is additionally arranged in indirect communication with a plurality of further semiconductor switching elements (12A, 12B, 12C, 12D, 12E, 12F, 12G, 12H, 12N-1, 12N) via the or each said semiconductor switching element (12A, 12B, 12C, 12D, 12E, 12F, 12G, 12H, 12N-1, 12N) with which it is arranged in direct communication. Each local switching controller (26A, 26B, 26N) is configured to vary during a switching transition the rate of change of terminal voltage of the semiconductor switching element (12A, 12B, 12C, 12D, 12E, 12F, 12G, 12H, 12N-1, 12N) with which it is operatively connected. The degree to which each local switching controller (26A, 26B, 26N) varies the said rate of change of terminal voltage of the semiconductor switching element (12A, 12B, 12C, 12D, 12E, 12F, 12G, 12H, 12N-1, 12N) with which it is operatively connected is influenced to a primary extent by the terminal voltage of the or each semiconductor switching element (12A, 12B, 12C, 12D, 12E, 12F, 12G, 12H, 12N-1, 12N) with which its associated semiconductor switching element (12A, 12B, 12C, 12D, 12E, 12F, 12G, 12H, 12N-1, 12N) is arranged in direct communication and to a secondary extent by the terminal voltage of each further semiconductor switching element (12A, 12B, 12C, 12D, 12E, 12F, 12G, 12H, 12N-1, 12N) with which its associated semiconductor switching elements is arranged in indirect communication. |
