| 发明名称 |
METHOD AND SYSTEM FOR DIAMOND-BASED OXYGEN SENSOR |
| 摘要 |
A diamond based oxygen sensor is able to function in harsh environment conditions. The oxygen sensor includes a gateless field effect transistor including a synthetic, quasi-intrinsic, hydrogen-passivated, monocrystalline diamond layer exhibiting a 2-dimension hole gas effect. The oxygen sensor also includes a sensing layer comprising yttrium-stabilized zirconia deposited onto a surface of the gateless field effect transistor. |
| 申请公布号 |
US2016056239(A1) |
申请公布日期 |
2016.02.25 |
| 申请号 |
US201514828718 |
申请日期 |
2015.08.18 |
| 申请人 |
Honeywell International Inc. |
发明人 |
Brezeanu Mihai;Serban Bogdan-Catalin;Dumitru Viorel Georgel;Buiu Octavian |
| 分类号 |
H01L29/16;H01L29/45;G01N27/414 |
主分类号 |
H01L29/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An oxygen sensor, comprising:
a gateless field effect transistor (FET) (100) including a synthetic, quasi-intrinsic, hydrogen-passivated diamond layer (116) exhibiting a 2-dimension hole gas effect; and an oxygen-sensing layer (124) including a yttrium-stabilized zirconia (YSZ) supported by the gateless FET (100). |
| 地址 |
Morris Plains NJ US |
