SOLID-STATE IMAGING APPARATUS AND MANUFACTURING METHOD OF SOLID-STATE IMAGING APPARATUS

摘要

The first face of the pad is situated between the front-side face of the second semiconductor substrate and a hypothetical plane including and being parallel to the front-side face, and a second face of the pad that is a face on the opposite side of the first face is situated between the first face and the front-side face of the second semiconductor substrate, and wherein the second face is connected to the wiring structure so that the pad is electrically connected to the circuit arranged in the front-side face of the second semiconductor substrate via the wiring structure.

主权项

1. A manufacturing method of a solid-state imaging apparatus comprising:
a step for bonding a first member having a first semiconductor substrate including a photoelectric conversion element and having a first wiring structure arranged on the front-side face of the first semiconductor substrate and a second member having a second semiconductor substrate including at least a part of a circuit arranged in a front-side face of the second semiconductor substrate, the circuit generating a signal based on a charge of the photoelectric conversion element and having a second wiring structure arranged on the front-side face of the second semiconductor substrate, wherein the first member and the second member are bonded so as to connect the first wiring structure and the second wiring structure to each other; and a step for thinning the first semiconductor substrate from a back-side face side of the first semiconductor substrate after the bonding step, wherein, prior to the bonding step, a pad to be connected to an external terminal is connected to the first wiring structure or the second wiring structure, and, after the thinning step, a step for exposing the pad on the first semiconductor substrate side is conducted.