WAFER TREATMENT SOLUTION FOR EDGE-BEAD REMOVAL, EDGE FILM HUMP REDUCTION AND RESIST SURFACE SMOOTH, ITS APPARATUS AND EDGE-BEAD REMOVAL METHOD BY USING THE SAME

摘要

The present disclosure provides a wafer treatment solution for edge-bead removal, edge film hump reduction and resist surface smooth. The wafer treatment solution includes a solution and a fluorine-containing additive mixed in the solution. The fluorine-containing additive has a following formula (I): Rf—X—(CH2CH2O)m—R1 (I); or a following formula (II):;;An apparatus and a method by using the wafer treatment solution are also provided herein.

主权项

1. A wafer treatment solution, comprising:
a solution; and a fluorine-containing additive dispersed in the solution, and having a compound of a formula (I):
Rf—X—(CH2CH2O)m—R1  (I),wherein Rf is a C1-C6 fluorine-containing alkyl group,
R1 is hydrogen, a C1-C3 alkyl group, a C1-C3 carboxylic group, or a C1-C3 amino group (—NH2), X is —O—, —NH—, —SO3NH—COO—, —CH2O— or —CO—, and m is an integer of 1-6; ora compound of a formula (II):wherein Rf is a C1-C6 fluorine-containing alkyl group,
R2 is —CH2—, R3 is a C1-C3 alkyl group, a C1-C3 alkoxyl group, a C1-C3 alkyloyl group, amino group (—NH2) or hydroxyl group (—OH), R4 is —CH2O— or —CH2—, Y is L is unsubstituted or —(CH2)n—, n is an integer of 1-3, o and q are individually an integer of 1-8, p is an integer of 1-3, and T is —OH, —OSO3−NH4+, —OSO3−Na+, —OSO3−K+, —NH2 or —COOH.