TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

The present invention relates to a transistor and a method for manufacturing the same. The transistor according to an embodiment of the present invention includes a substrate, a drain electrode formed on the substrate, a source electrode formed on the substrate and spaced apart from the drain electrode, a channel layer formed on the substrate and including a channel region electrically connecting the drain electrode and the source electrode to each other, a gate electrode formed on the substrate and spaced apart from the channel region, and a liquid crystal layer formed on the substrate to connect the channel layer and the gate electrode to each other.

主权项

1. A transistor comprising:
a substrate; a drain electrode on the substrate; a source electrode on the substrate, the source electrode being spaced apart from the drain electrode; a channel layer on the substrate, the channel layer comprising a channel region electrically connecting the drain electrode and the source electrode to each other; a gate electrode on the substrate, the gate electrode being spaced apart from the channel region; and a liquid crystal layer on the substrate, the liquid crystal layer connecting the channel layer and the gate electrode to each other.