GERMANIUM CHEMICAL MECHANICAL POLISHING

摘要

A method of planarizing/polishing germanium is described. The method comprises the step of abrading the surface of a substrate comprising germanium with an aqueous chemical mechanical polishing (CMP) composition comprising an oxidizing agent, a particulate abrasive, and a germanium etching inhibitor. The germanium etching inhibit is selected from the group consisting of a water-soluble polymer, an amino acid having a non-acidic side chain, a bis-pyridine compound, and a combination of two or more thereof. The polymer can be a cationic or nonionic polymer that comprises basic nitrogen groups, amide groups, or a combination thereof.

主权项

1. A method of polishing germanium comprising the step of abrading the surface of a substrate comprising germanium with an aqueous chemical mechanical polishing (CMP) composition comprising an oxidizing agent, a particulate abrasive, and a germanium etching inhibitor comprising a cationic polymer selected from the group consisting of poly(diallyldimethylammonium)chloride (polyDADMAC), poly(methacryloyloxyethyltrimethylammonium)chloride (polyMADQUAT), poly(dimethylamine-co-epichlorohydrin-co-ethylenediamine) (polyDEE), and a copolymer of acrylamide and DADMAC, plus an amino acid selected from the group consisting of lysine, arginine, histidine, glycine, beta-alanine, tricine, and valine.