| 发明名称 |
HALL EFFECT DEVICE |
| 摘要 |
A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements. |
| 申请公布号 |
US2016056369(A1) |
申请公布日期 |
2016.02.25 |
| 申请号 |
US201514933351 |
申请日期 |
2015.11.05 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Kolb Stefan;Eckinger Markus |
| 分类号 |
H01L43/06;H01L43/14;H01L27/22;G01R33/07;G01R33/00 |
主分类号 |
H01L43/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A Hall effect device, comprising:
an active Hall region in a semiconductor substrate, wherein the active Hall region comprises at least three triangular active sub-regions, and at least three terminal structures in each triangular active sub-region, each terminal structure comprising a switchable supply contact element and a sense contact element, wherein each supply contact element comprises a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements. |
| 地址 |
Neubiberg DE |
