3-D PLANES MEMORY DEVICE

摘要

The present invention is a means and a method for manufacturing large three dimensional memory arrays. The present invention is a means and a method for addressing the WL and BL resistance by creating arrays having not only large plane conductors for each of the memory layers (WLs) but also for the opposite polarity common layer (BL). The present invention is also a means and a method to form via interconnections between the substrate logic and the respective layers of a multidimensional array. The present invention is also a way to operate an array in which the select device is unipolar but the array is above to be operated in a bipolar way. This facilitates a bipolar operation for memory cell technologies such as Resistive RAM (e.g., RRAM, ReRAM and Memresistors).

主权项

1. A memory device comprising
(i) one or more bit line areas in the substrate, each bit line area having a width that is greater than 2 CD wide, (ii) a plurality of layers comprising information storage elements, each such layer comprising a word line area having a width that is greater than 2 CD wide, and (iii) a plurality of vertical conductive posts passing through the plurality of layers, whereby a vertical conductive post passes through a layer at a point proximate to an information storage element.