NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

According to an embodiment, a nonvolatile semiconductor memory device comprises: a semiconductor substrate; a first gate insulating film; a floating gate electrode; a second gate insulating film; and a control gate electrode. The first gate insulating film is formed on the semiconductor substrate. The floating gate electrode is formed arranged in a first direction on the first gate insulating film. The second gate insulating film is formed on an upper surface and a side surface of the floating gate electrode. The control gate electrode is formed extending in the first direction and facing the upper surface and the side surface of the floating gate electrode via the second gate insulating film. In addition, the floating gate electrode includes boron. Moreover, a concentration of boron in the floating gate electrode is higher with being further from the semiconductor substrate.

主权项

1. A nonvolatile semiconductor memory device, comprising:
a semiconductor substrate; a first gate insulating film formed on the semiconductor substrate; a floating gate electrode formed arranged in a first direction on the first gate insulating film; a second gate insulating film formed on an upper surface and a side surface of the floating gate electrode; and a control gate electrode extending in the first direction and facing the upper surface and the side surface of the floating gate electrode via the second gate insulating film, the floating gate electrode including boron, and a concentration of boron in the floating gate electrode being higher with being further from the semiconductor substrate.