MEMORY DEVICE

摘要

A memory device including a substrate including a plurality of unit cell regions; a plurality of active regions on the substrate; and a plurality of gate electrodes on the substrate and extending in a first direction and intersecting at least one of the plurality of active regions, the plurality of active regions being adjacent to a boundary between the plurality of unit cell regions, and being separated from each other within the plurality of unit cell regions along a second direction orthogonal to the first direction.

主权项

1. A memory device, comprising:
a substrate including unit cell regions; active regions on the substrate; and gate electrodes on the substrate and extending in a first direction and intersecting at least one of the active regions, the active regions being adjacent to a boundary between the unit cell regions, and being separated from each other within the unit cell regions along a second direction orthogonal to the first direction.