| 摘要 |
A method for removing oxide selective to a material comprising at least silicon and at least nitrogen is disclosed, the method comprising providing in a reactor a structure having a surface comprising a region, wherein said region comprises a material comprising at least silicon and at least nitrogen, providing on said structure an oxide layer overlying at least a part of said region, and removing said oxide layer selective to said material by etching, thereby exposing at least a part of said at least overlaid part of said region, wherein said etching is done only by providing an etchant gas comprising boron, whereby a voltage bias lower than 30 V is applied to the structure. |
