发明名称 EUVマスクの平坦度の評価方法およびシステム
摘要 A method (200) for evaluating a lithographic system or component thereof is described. The method (200) comprises directing (204) electromagnetic radiation of a second wavelength or wavelength range, different from electromagnetic radiation of a first wavelength or wavelength range for lithographic processing in the lithographic system, to a lithographic optical element and detecting at least part of the electromagnetic radiation being reflected from the lithographic optical element at a substrate comprising a photosensitive layer, thereafter evaluating (205) the detected electromagnetic radiation, and determining (206) from the evaluation of the exposed photosensitive layer a topographical parameter of the lithographic optical element and/or a holder thereof.
申请公布号 JP5869251(B2) 申请公布日期 2016.02.24
申请号 JP20110166329 申请日期 2011.07.29
申请人 アイメックIMEC 发明人 ジャン・フランチェスコ・ロルッソ;サン・リー
分类号 G03F7/20;G03F1/84 主分类号 G03F7/20
代理机构 代理人
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